Ieee Journal Of The Electron Devices Society SCIE

國際簡稱：IEEE J ELECTRON DEVI 參考譯名：IEEE電子器件學(xué)會雜志

主要研究方向：Biochemistry, Genetics and Molecular Biology-Biotechnology 非預(yù)警期刊審稿周期： 9 Weeks

《IEEE電子器件學(xué)會雜志》(Ieee Journal Of The Electron Devices Society)是一本由Institute of Electrical and Electronics Engineers Inc.出版的以Biochemistry, Genetics and Molecular Biology-Biotechnology為研究特色的國際期刊，發(fā)表該領(lǐng)域相關(guān)的原創(chuàng)研究文章、評論文章和綜述文章，及時報道該領(lǐng)域相關(guān)理論、實踐和應(yīng)用學(xué)科的最新發(fā)現(xiàn)，旨在促進該學(xué)科領(lǐng)域科學(xué)信息的快速交流。該期刊是一本開放期刊，近三年沒有被列入預(yù)警名單。

3區(qū) 中科院分區(qū)
Q3 JCR分區(qū)
92 年發(fā)文量
2 IF影響因子
開放是否OA
23 H-index
2013 創(chuàng)刊年份
1 issue/year 出版周期
English 出版語言

The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC's, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.

[ 查看全部 ]

投稿咨詢加急咨詢

Ieee Journal Of The Electron Devices Society期刊信息

ISSN：2168-6734
出版語言：English
是否OA：開放
E-ISSN：2168-6734
出版地區(qū)：UNITED STATES
是否預(yù)警：否
出版商：Institute of Electrical and Electronics Engineers Inc.
出版周期：1 issue/year
創(chuàng)刊時間：2013
開源占比：0.9789
Gold OA文章占比：97.60%
OA被引用占比：1
出版國人文章占比：0.21
出版撤稿占比：0
研究類文章占比：98.91%

Ieee Journal Of The Electron Devices Society CiteScore評價數(shù)據(jù)（2024年最新版）

CiteScore

SJR

SNIP

CiteScore 指數(shù)

5.2

0.505

0.955

學(xué)科類別	分區(qū)	排名	百分位
大類：Materials Science 小類：Electronic, Optical and Magnetic Materials	Q2	90 / 284	68%
大類：Materials Science 小類：Electrical and Electronic Engineering	Q2	253 / 797	68%
大類：Materials Science 小類：Biotechnology	Q2	139 / 311	55%

名詞解釋：CiteScore 是衡量期刊所發(fā)表文獻的平均受引用次數(shù)，是在 Scopus 中衡量期刊影響力的另一個指標(biāo)。當(dāng)年CiteScore 的計算依據(jù)是期刊最近4年（含計算年度）的被引次數(shù)除以該期刊近四年發(fā)表的文獻數(shù)。例如，2022年的 CiteScore 計算方法為：2022年的 CiteScore =2019-2022年收到的對2019-2022年發(fā)表的文件的引用數(shù)量÷2019-2022年發(fā)布的文獻數(shù)量注：文獻類型包括：文章、評論、會議論文、書籍章節(jié)和數(shù)據(jù)論文。

Ieee Journal Of The Electron Devices Society中科院評價數(shù)據(jù)

中科院 2023年12月升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	工程技術(shù)	3區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣	4區(qū)

中科院 2022年12月升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	工程技術(shù)	3區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣	3區(qū)

中科院 2021年12月舊的升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	工程技術(shù)	3區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣	3區(qū)

中科院 2021年12月基礎(chǔ)版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	工程技術(shù)	4區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣	4區(qū)

中科院 2021年12月升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	工程技術(shù)	3區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣	3區(qū)

中科院 2020年12月舊的升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	工程技術(shù)	3區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣	3區(qū)

Ieee Journal Of The Electron Devices Society JCR評價數(shù)據(jù)（2023-2024年最新版）

按JIF指標(biāo)學(xué)科分區(qū)	收錄子集	分區(qū)	排名	百分位
學(xué)科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	202 / 352	42.8%

按JCI指標(biāo)學(xué)科分區(qū)	收錄子集	分區(qū)	排名	百分位
學(xué)科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	179 / 354	49.58%

Ieee Journal Of The Electron Devices Society歷年數(shù)據(jù)統(tǒng)計

影響因子

中科院分區(qū)

Ieee Journal Of The Electron Devices Society中國學(xué)者發(fā)文選摘

1、Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform
Author: Zhu, Yuhao; Li, Fan; Cui, Miao; Fang, Zhicheng; Li, Ang; Yang, Dongyi; Zhao, Yinchao; Wen, Huiqing; Liu, Wen

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 230-234. DOI: 10.1109/JEDS.2023.3265372
2、New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs
Author: Zhu, Kunfeng; Zhang, Peijian; Xu, Zicheng; Wang, Tao; Yi, Xiaohui; Hong, Min; Yang, Yonghui; Zhang, Guangsheng; Liu, Jian; Wei, Jianan; Pu, Yang; Huang, Dong; Luo, Ting; Chen, Xian; Tang, Xinyue; Tan, Kaizhou; Chen, Wensuo

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 30-35. DOI: 10.1109/JEDS.2023.3239341
3、Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off
Author: Zhang, Meng; Zhang, Yamin; Li, Baikui; Feng, Shiwei; Hua, Mengyuan; Tang, Xi; Wei, Jin; Chen, Kevin J.

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 198-203. DOI: 10.1109/JEDS.2023.3259639
4、Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks
Author: Sun, Yu; Schwarzenbach, Walter; Yuan, Sicong; Chen, Zhuo; Yang, Yanbin; Nguyen, Bich-Yen; Gao, Dawei; Zhang, Rui

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 210-215. DOI: 10.1109/JEDS.2023.3260978
5、Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of beta-Ga2O3/Si Schottky Barrier Diodes
Author: Qu, Zhenyu; Xu, Wenhui; You, Tiangui; Shen, Zhenghao; Zhao, Tiancheng; Huang, Kai; Yi, Ailun; Zhang, David Wei; Han, Genquan; Ou, Xin; Hao, Yue

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 135-140. DOI: 10.1109/JEDS.2023.3242968
6、Novel Stacked Passivation Structure for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit
Author: Liu, Xiaoyi; Qin, Jian; Chen, Jingxiong; Chen, Jianyu; Wang, Hong

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 130-134. DOI: 10.1109/JEDS.2023.3241306
7、RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera
Author: Liu, Chang; Liu, Hong Xia; Chen, Yi Qiang; Shi, Yi Jun; Xie, Yu Han; Chen, Si; Lai, Ping; He, Zhi Yuan; Huang, Yun

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 47-53. DOI: 10.1109/JEDS.2023.3239100
8、Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors
Author: Islam, Md. Sherajul; Mazumder, Abdullah Al Mamun; Zhou, Changjian; Stampfl, Catherine; Park, Jeongwon; Yang, Cary Y. Y.

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 235-247. DOI: 10.1109/JEDS.2023.3267081